Our Custom-Built Labs

Electron Microscopy Lab

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Electron Microscopy Lab

The electron microscopy lab at the Department of Chemistry is operated by the groups of Prof. Laquai and Prof. Müller-Caspary. It features high-resolution instruments for a great variety of applications in materials science. One key focus is the use and development of 4D STEM methods.

Titan Themis 60-300 (FEI)

Probe corrected, monochromated (scanning) transmission electron microscope

  • Resolution around 100 pm in TEM and 80 pm in STEM mode
  • Ultrafast electron detector for event based and time resolved (S)TEM, particularly suited for 4D STEM, Timepix T4 (Quantum Detectors)
  • Energy dispersive X-ray (EDX) spectroscopy, Super-X detector
  • Electron energy loss spectrometer: Gatan Enfinium ER /077
  • Programmable phase plate with 48 pixels for electron beam shaping, AdaptEM WaveCrafter
  • Various sample holders: tomography, heating, cooling and biasing, vacuum transfer and cryo transfer, among others

Helios G3 UC (FEI)

High resolution SEM with Ga ion column for focused ion beam sample manipulation.

  • Landing energy range ~100 eV – 30 keV
  • Resolution 0.6 nm (2 kV – 30 kV)
  • Gas injection system for Pt deposition
  • Oxford AZtec EDX detector
  • Several detectors and imaging modes, sensitive for different sample aspects
  • STEM possible (< 30 kV)
  • Analysis of multilayer cross sections in-situ using Ga⁺ beam preparation
  • Site-specific TEM lamella preparation

Tecnai G2 20 S-Twin (FEI)

Transmission electron microscopy with LaB6 emitter, operated at 200 kV.

  • Tietz CMOS camera (2k)
  • EDAX EDX detector

Further supportive instruments

  • H₂/O₂ plasma cleaner, Gatan Solarus
  • Ozone cleaner, ZoneTEM II Sunyu
  • Instrumentation for mechanical sample preparation and for argon ion milling, Gatan PIPS

Key equipment

  • Titan Themis 60-300 (FEI): resolution 100 pm in TEM and 80 pm in STEM mode; ultrafast electron detector for event based and time resolved (S)TEM, 4D STEM, Timepix T4 (Quantum Detectors); EDX; tomography, heating, cooling and biasing, vacuum and cryo transfer, and more
  • Helios G3 UC (FEI): landing energy range ~100 eV – 30 keV; resolution 0.6 nm (2 kV – 30 kV); STEM possible (< 30 kV); in-situ Ga-beam preparation; site-specific TEM lamella preparation
  • Tecnai G2 20 S-Twin (FEI): TEM with LaB6 emitter, operated at 200 kV; Tietz CMOS camera (2k); EDAX EDX detector